Transition-metal dichalcogenides (TMDs) are a class of material that’s been receiving significant attention as a possible successor of silicon. Recently, a team of researchers has demonstrated the use ...

Ferroelectric capacitors can be made as thin as 30nm to add memory between the metallisation layers of ICs, according to ...

For semiconductor designers this outlines how a thin ferroelectric stack can retain polarization and support memory ...

SK Hynix will unveil a lineup of next-generation high-bandwidth memory (HBM) products at CES2026. The global No. 1 HBM ...

An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite ...

The company showcases 16-layer HBM4 product with 48GB, next generation HBM product, for the first time during the exhibition. The product is the next generation product of 12-layer HBM4 product with ...

Released every 12 to 18 months, 3D NAND scaling outpaces most other semiconductor devices in replacement rate and performance ...

Nvidia has reportedly begun testing the limits of the global AI memory supply chain by signaling interest in 16-layer ...

Developed core technology that will allow practical implementation of high-density, low-power 3D DRAM, presented at IEEE International Electron Devices Meeting (IEDM) ...

Samsung, SK hynix, and Micron are fighting each other over new 16-Hi HBM memory, as NVIDIA requests the new 16-Hi HBM memory ...