Renesas Electronics Corp. has developed two new circuit technologies for an embedded spin-transfer torque magnetoresistive random-access memory (STT-MRAM) test chip with fast read and write ...

Forbes contributors publish independent expert analyses and insights. I attended the 2024 IEEE Magnetics Society TMRC conference at the University of California in Berkeley. The sessions I attended ...

CHANDLER, Ariz.--(BUSINESS WIRE)--Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory solutions ...

In a recently published article in IEEE Electron Devices Magazine the authors, I was one of them, looked at the impact of external magnetic fields on spin tunnel torque magnetic random-access memories ...

Everspin is being re-rated from a niche MRAM supplier into a potential strategic memory infrastructure company, supported by defense validation, Microchip second-source capacity, and long-term ...

“Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is one of the leading candidates for embedded memory convergence in advanced technology nodes. It is particularly adapted to low-power ...

High-speed Circuit Technologies and Silicon Measurement Results of MCU Test Chip Presented in ISSCC 2024 TOKYO--(BUSINESS WIRE)-- Renesas Electronics Corporation (TSE:6723), a premier supplier of ...

A technical paper titled “Impact of external magnetic fields on STT-MRAM” was recently published by researchers at Univ. Grenoble Alpes, Everspin, GlobalFoundries, imec, et al. “This application note ...

Announced at IEDM 2021: Confirmed Reduced Power Consumption and Increased Speed in Write Operations on 16 nm FinFET Logic Process Embedded STT-MRAM Test Chip TOKYO--(BUSINESS WIRE)--Renesas ...

Magneto-resistive random access memory (MRAM) is a non-volatile memory technology that relies on the (relative) magnetization state of two ferromagnetic layers to store binary information. Throughout ...