Based on Tower’s advanced 65nm Stacked BSI CIS platform with hybrid bonding for advanced ToF (Time-of-Flight) and Global Shutter sensors Providing state-of-the-art imaging solutions addressing the ...
NEO's IGZO-based 3D X-DRAM delivers up to 512Gb density and 450-second retention with ultra-low power consumption — built on 3D NAND-compatible processes and optimized for AI, in-memory computing, and ...
INCERGO and Visual Semiconductor will present live demonstrations at the Consumer Electronics Show (CES) 2026, January 6–9, at LVCC, Central Hall, Booth 21123, where the companies will showcase GF3D™ ...
What just happened? A Californian company is launching what it calls a ground-breaking solution for increasing DRAM chip density with 3D stacking technology. The new memory chips will greatly improve ...
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3D X-DRAM aims for 10x capacity of today's memory — NEO Semiconductor's memory has up to 512 Gb per module
NEO Semiconductor is once again announcing a new technology that hopes to revolutionize the state of DRAM memory. Today, the company unveiled two new 3D X-DRAM cell designs, 1T1C and 3T0C. The ...
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