Power electronics and semiconductor devices lie at the heart of modern energy conversion and control systems. Recent advances have focused on utilising wide‐bandgap materials such as silicon carbide ...

Power devices continue to evolve rapidly as SiC and GaN technologies become more highly integrated, easy to use, and cost-effective. Meanwhile, steady improvements in MOSFET structures and processes ...

Double-pulse testing will play a pivotal role in the future of power electronics. Power designers and system engineers rely on it to evaluate the switching characteristics of power semiconductors such ...

The research team led by Dr. Jae Hwa Seo at Advanced Semiconductor Research Center of KERI has developed technology to evaluate radiation resistance and secure reliability of silicon carbide (SiC) ...

Easily and accurately measure dynamic characteristics on a Wide-Bandgap power semiconductor bare chip without soldering or probe needles Keysight fixture enables quick, repeated test without damaging ...