Kitguru.net Hardware editors Leo Waldock and Luke Hill discuss 3D nand and which ssd interface is going to be the most widely adopted in the future. They also discuss the unpleasant topic of ssd ...

The 74ABT00 is a quad 2-input NAND gate. This device is fully specified for partial power down applications using Ioff. The Ioff circuitry disables the output, preventing the potentially damaging ...

The 74AXP1G10GN is a low-power NAND gate with 3 inputs. This device operates with supply voltages from 0.7 V to 2.75 V at a specified temperature range from -40 °C to +85 °C. It is extremely small ...

Samsung is announcing the opening of a new frontier in solid-state storage today with the arrival of its 9th generation quad-level cell (QLC) V-NAND flash. This type of NAND stores four bits of data ...

Forbes contributors publish independent expert analyses and insights. Covering Digital Storage Technology & Market. IEEE President in 2024 ...

Why it matters: Western Digital dropped a bombshell during a recent investor presentation. The storage giant has teased the world's first 2Tb 3D quad-level cell NAND flash memory die. The chip dwarfs ...

“The shipment of Micron G9 NAND is a testament to Micron’s prowess in process technology and design innovations,” said Scott DeBoer, executive vice president of Technology and Products at Micron.

Freezing edge technology: A new plasma-based etching process could lead to denser data storage in phones, cameras, and computers. Researchers have developed a hydrogen fluoride plasma technique that ...

Samsung Electronics, the leader in NAND flash, has reportedly entered the high-bandwidth flash (HBF) memory market, signaling ...